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The Physics Of Submicron Semiconductor Devices

RRP $1.00

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.


Nanotechnologies For Future Mobile Devices

RRP $267.99

Explore the potential for nanotechnologies to transform future mobile and Internet communications. Based on a research collaboration between Nokia, Helsinki University of Technology, and the University of Cambridge, here leading researchers review the current state-of-the art and future prospects for: * Novel multifunctional materials, dirt repellent, self-healing surface materials, and lightweight structural materials capable of adapting their shape * Portable energy storage using supercapacitor-battery hybrids based on new materials including carbon nanohorns and porous electrodes, fuel cell technologies, energy harvesting and more efficient solar cells * Electronics and computing advances reaching beyond IC scaling limits, new computing approaches and architectures, embedded intelligence and future memory technologies. * Nanoscale transducers for mechanical, optical and chemical sensing, sensor signal processing, and nanoscale actuation * Nanoelectronics to create ultrafast and adaptive electronics for future radio technologies * Flat panel displays with greater robustness, improved resolution, brightness and contrast, and mechanical flexibility * Manufacturing and innovation processes, plus commercialization of nanotechnologies.


Applications Of Silicon-germanium Heterostructure Devices

RRP $565.99

Combining technology, device design and simulation, and applications, this book is the first to deal with the design and optimization of transistors made from strained layers. Topics include background theory of the HBT, device simulation that predicts the optimum HBT device structure for a particular application, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and the enhancement of the high-frequency performance of HFETs using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.


Molecular Bioelectronics

RRP $341.99

Molecular bioelectronics is a field in strong evolution at the frontier of life and materials sciences. The term is utilized in a broad context to emphasize a unique blend of electronics and biotechnology which is seen as the best way to achieve many objectives of industrial and scientific relevance, including biomolecular engineering, bioelectronic devices, materials and sensors capable of optimal hardware efficiency and intelligence and molecular miniaturization.


Quantum Transport In Ultrasmall Devices

RRP $436.99

The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.



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Fuel Saving Devices Books

Petrol Gas Fuel Oil
Additives Magnets Vapor devices Air bleed devices
Electronic devices Thermodynamic efficiency

Fuel Saving Devices